data sheet no. pd-6.076 IR02H420 high voltage half-bridge features n output power mosfets in half-bridge configuration n 500v rated breakdown voltage n high side gate drive designed for bootstrap operation n matched propagation delay for both channels n independent high and low side output channels n undervoltage lockout n 5v schmitt-triggered input logic n half-bridge output out of phase with hin description the IR02H420 is a high voltage, high speed half bridge. proprietary hvic and latch immune cmos technologies, along with the hexfet ? power mosfet technology, enable ruggedized single package construction. the logic inputs are compatible with standard cmos or lsttl outputs. the front end features an independent high and low side driver in phase with the logic compatible input signals. the output features two hexfets in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half- bridge. propagation delays for the high and low side power mosfets are matched to simplify use. the device can operate up to 500 volts. product summary v in (max) 500v t on/off 130 ns t rr 270 ns r ds(on) 3.0 w w p d (t a = 25 oc ) 2.0w package IR02H420 9506 typical connection to load IR02H420 com cc v v in b v up to 500v dc bus vo com v in 1 2 3 4 6 9 7 cc v h in h in l in l in
IR02H420 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage parameters are absolute voltages referenced to com, all currents are defined positive into any lead. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. parameter symbol definition min. max. units v in high voltage supply -0.3 500 v b high side floating supply absolute voltage -0.3 525 vo half-bridge output voltage -0.3 v in + 0.3 v v ih /v il logic input voltage (hin & lin) -0.3 v cc + 0.3 v cc low side and logic fixed supply voltage -0.3 25 dv/dt peak diode recovery dv/dt --- 3.5 v/ns p d package power dissipation @ t a +25oc --- 2.00 w r q ja thermal resistance, junction to ambient --- 60 oc/w t j junction temperature -55 150 t s storage temperature -55 150 oc t l lead temperature (soldering, 10 seconds) --- 300 recommended operating conditions the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. parameter symbol definition min. max. units v b high side floating supply absolute voltage vo + 10 vo + 20 v in high voltage supply --- 500 v vo half-bridge output voltage (note 1) 500 v cc low side and logic fixed supply voltage 10 20 v ih /v il logic input voltage (hin & lin) 0 v cc i d continuous drain current (t a = 25oc) --- 0.7 a (t a = 85oc) --- 0.5 t a ambient temperature -40 125 oc note 1: logic operational for v o of -5 to 500 v. logic state held for vo of -5 to - v b .
IR02H420 dynamic electrical characteristics v bias (v cc , v b ) = 15v and t a = 25 oc unless otherwise specified. switching time waveform definitions are shown in figure 2. parameter t a = 25oc symbol definition min. typ. max. units test conditions t on turn-on propagation delay (see note 2) --- 130 200 v s = 0 v t off turn-off propagation delay (see note 2) --- 90 200 v s = 500 v t r turn-on rise time (see note 2) --- 80 120 ns t f turn-off fall time (see note 2) --- 40 70 mt delay matching, hs & ls turn-on/off --- 30 --- t rr reverse recovery time (mosfet body diode) --- 260 --- i f = 0.7 a q rr reverse recovery charge (mosfet body diode) --- 0.7 --- c di/dt = 100a/s note 2: switching times as specified and illustrated in figure 2 are referenced to the mosfet gate input voltage. this is shown as ho in figure 2. static electrical characteristics v bias (v cc , v b ) = 15v and t a = 25 oc unless otherwise specified. the input voltage and current levels are referenced to com. parameter t a = 25oc symbol definition min. typ. max. units test conditions supply characteristics v ccuv + v cc supply undervoltage positive going threshold 8.8 9.3 9.8 v v ccuv - v cc supply undervoltage negative going threshold 7.5 8.2 8.6 i qcc quiescent v cc supply current --- 140 240 i qbs quiescent v bs supply current --- 20 50 a i os offset supply leakage current --- --- 50 v b = v s = 500v input characteristics v ih logic ?1? input voltage 2.7 --- --- v v cc = 10v to 20v v il logic ?0? input voltage --- --- 0.8 i in+ logic ?1? input bias current --- 20 40 a i in- logic ?0? input bias current --- --- 1.0 a output characteristics r ds(on) static drain-to-source on-resistance --- 3.0 --- w i d = 700ma v sd diode forward voltage --- 0.8 --- v t j = 150 oc
IR02H420 functional block diagram ir2102 vo com v b v cc vin irfc420 irfc420 1 2 3 4 6 9 7 ___ hin ___ lin lead definitions lead symbol description v cc logic and internal gate drive supply voltage. hin logic input for high side half bridge output, out of phase lin logic input for low side half bridge output, in phase v b high side gate drive floating supply. for bootstrap operation a high voltage fast recovery diode is needed to feed from v cc to v b . v in high voltage supply. vo half-bridge output. com logic and low side of half-bridge return. lead assignments v cc v0 v in hin lin com v b 9 7 6 4 3 2 1 9 lead sip w/o leads 5 & 8 IR02H420
IR02H420 ___ hin vo ___ lin v+ 0 ___ hin t r t on t f t off ho 50% 50% 90% 90% 10% 10% vo figure 1. input/output timing diagram figure 2. switching time waveform definitions ___ hin ___ lin ho 50% 50% 10% lo 90% mt ho lo mt figure 3. delay matching waveform definitions
IR02H420 package outline world headquarters: 233 kansas st., el segundo, ca 90245 usa ? (310)322-3331 ? fax (310)322-3332 ? telex 472-0403 european headquarters: hurst green, oxted, surrey rh8 9bb, uk ? (44)0883 713215 ? fax (944)0883 714234 ? telex 95219 sales offices, agents and distributors in major cities throughout the world. data and specifications subject to change without notice. ? 1996 international rectifier printed in u.s.a. 3-96
|
